Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond

L. Fan, L. Constantin, Z. P. Wu, K. A. McElveen, X. G. Chen, T. He, F. Wang, C. Debiemme-Chouvy, B. Cui, R. Y. Lai, X. Li, J. F. Silvain, Y. F. Lu

Research output: Contribution to journalArticlepeer-review

Abstract

Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH2). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 1021cm-3, a film resistivity of 28.1 milliohm.cm, and hole mobility of 55.6 cm2V-1s-1, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.

Original languageEnglish (US)
Article numbereabc7547
JournalScience Advances
Volume7
Issue number4
DOIs
StatePublished - Jan 20 2021

ASJC Scopus subject areas

  • General

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