Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

Fereydoon Namavar; N. M. Kalkhoran; A. Claverie; Z. Liliental-Weber; E. R. Weber; P. A. Sekula-Moisé; S. Vernon; V. Haven

doi:10.1007/BF02649987

Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

Fereydoon Namavar, N. M. Kalkhoran, A. Claverie, Z. Liliental-Weber, E. R. Weber, P. A. Sekula-Moisé, S. Vernon, V. Haven

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III-V compound-based technologies for high-speed and radiation-hard circuits.

Original language	English (US)
Pages (from-to)	1409-1412
Number of pages	4
Journal	Journal of Electronic Materials
Volume	22
Issue number	12
DOIs	https://doi.org/10.1007/BF02649987
State	Published - Dec 1993
Externally published	Yes

Keywords

Arsenic implantation
GaAs insulating layers
arsenic precipitates
high packing density

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02649987

Cite this

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title = "Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers",

abstract = "We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III-V compound-based technologies for high-speed and radiation-hard circuits.",

keywords = "Arsenic implantation, GaAs insulating layers, arsenic precipitates, high packing density",

author = "Fereydoon Namavar and Kalkhoran, {N. M.} and A. Claverie and Z. Liliental-Weber and Weber, {E. R.} and Sekula-Mois{\'e}, {P. A.} and S. Vernon and V. Haven",

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doi = "10.1007/BF02649987",

language = "English (US)",

volume = "22",

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T1 - Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

AU - Namavar, Fereydoon

AU - Kalkhoran, N. M.

AU - Claverie, A.

AU - Liliental-Weber, Z.

AU - Weber, E. R.

AU - Sekula-Moisé, P. A.

AU - Vernon, S.

AU - Haven, V.

PY - 1993/12

Y1 - 1993/12

N2 - We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III-V compound-based technologies for high-speed and radiation-hard circuits.

AB - We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III-V compound-based technologies for high-speed and radiation-hard circuits.

KW - Arsenic implantation

KW - GaAs insulating layers

KW - arsenic precipitates

KW - high packing density

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Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

Abstract

Keywords

ASJC Scopus subject areas

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