Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

Fereydoon Namavar, N. M. Kalkhoran, A. Claverie, Z. Liliental-Weber, E. R. Weber, P. A. Sekula-Moisé, S. Vernon, V. Haven

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III-V compound-based technologies for high-speed and radiation-hard circuits.

Original languageEnglish (US)
Pages (from-to)1409-1412
Number of pages4
JournalJournal of Electronic Materials
Volume22
Issue number12
DOIs
StatePublished - Dec 1993

Keywords

  • Arsenic implantation
  • GaAs insulating layers
  • arsenic precipitates
  • high packing density

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Namavar, F., Kalkhoran, N. M., Claverie, A., Liliental-Weber, Z., Weber, E. R., Sekula-Moisé, P. A., Vernon, S., & Haven, V. (1993). Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers. Journal of Electronic Materials, 22(12), 1409-1412. https://doi.org/10.1007/BF02649987