Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions

Y. F. Chong, K. L. Pey, Y. F. Lu, A. T.S. Wee, T. Osipowicz, H. L. Seng, A. See, J. Y. Dai

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.

Original languageEnglish (US)
Pages (from-to)2994-2996
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number19
DOIs
StatePublished - Nov 6 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chong, Y. F., Pey, K. L., Lu, Y. F., Wee, A. T. S., Osipowicz, T., Seng, H. L., See, A., & Dai, J. Y. (2000). Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions. Applied Physics Letters, 77(19), 2994-2996. https://doi.org/10.1063/1.1323549