Abstract
Reported here are easily accessible memory devices based upon stripes of chemical vapor deposited (CVD) nanosized irregular discs of graphitic material that can be layered in stripes ≤10 nm thick with controllable lengths and widths. These lithographic graphitic stripes, which can be easily fabricated in large quantities in parallel by conventional fabrication techniques (such as CVD and photo-or e-beam lithography), with yields ≥95%, are shown to exhibit voltage-induced switching behavior, which can be used for two-terminal memories. These memories are stable, rewritable, and nonvolatile with ON/OFF ratios up to 107, switching times down to 1 μs (tested limit), and switching voltages down to 3-4 V. The major functional parameters of these lithographic memories are shown to be scalable with the devices' dimensions.
Original language | English (US) |
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Pages (from-to) | 2760-2766 |
Number of pages | 7 |
Journal | ACS Nano |
Volume | 3 |
Issue number | 9 |
DOIs | |
State | Published - Sep 22 2009 |
Externally published | Yes |
Keywords
- CVD
- Graphene
- Graphitic carbon
- Nanoscale devices
- Nonvolatile memories
- Resistive switching
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy