Abstract
In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55μm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.
Original language | English (US) |
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Pages (from-to) | 115-124 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3630 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 Silicon-based Optoelectronics - San Jose, CA, USA Duration: Jan 27 1999 → Jan 28 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering