Loss measurements for β-SiC-on insulator waveguides for high-speed silicon-based photonic devices

Adrian Vonsovici; Graham T. Reed; Alan G.R. Evans; F. Namavar

doi:10.1117/12.342797

Loss measurements for β-SiC-on insulator waveguides for high-speed silicon-based photonic devices

Adrian Vonsovici, Graham T. Reed, Alan G.R. Evans, F. Namavar

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO₂ layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55μm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

Original language	English (US)
Pages (from-to)	115-124
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3630
DOIs	https://doi.org/10.1117/12.342797
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Silicon-based Optoelectronics - San Jose, CA, USA Duration: Jan 27 1999 → Jan 28 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.342797

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@article{5cee36b0c711446b9b68514a74ae643a,

title = "Loss measurements for β-SiC-on insulator waveguides for high-speed silicon-based photonic devices",

abstract = "In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55μm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.",

author = "Adrian Vonsovici and Reed, {Graham T.} and Evans, {Alan G.R.} and F. Namavar",

year = "1999",

doi = "10.1117/12.342797",

language = "English (US)",

volume = "3630",

pages = "115--124",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Silicon-based Optoelectronics ; Conference date: 27-01-1999 Through 28-01-1999",

}

TY - JOUR

T1 - Loss measurements for β-SiC-on insulator waveguides for high-speed silicon-based photonic devices

AU - Vonsovici, Adrian

AU - Reed, Graham T.

AU - Evans, Alan G.R.

AU - Namavar, F.

PY - 1999

Y1 - 1999

N2 - In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55μm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

AB - In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55μm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

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DO - 10.1117/12.342797

M3 - Conference article

AN - SCOPUS:0033608018

SN - 0277-786X

VL - 3630

SP - 115

EP - 124

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Silicon-based Optoelectronics

Y2 - 27 January 1999 through 28 January 1999

ER -

Loss measurements for β-SiC-on insulator waveguides for high-speed silicon-based photonic devices

Abstract

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