Low energy SIMOX (LES)

F. Namavar, E. Cortesi, B. Buchanan, P. Sioshansi

Research output: Contribution to conferencePaper

24 Scopus citations

Abstract

Results and mechanisms involved in producing high-quality separation by implantation of oxygen (SIMOX) material at low energy (30-80 keV) are presented and discussed in detail. The theoretical advantages of using low-energy implantation are derived and verified. Some of these advantages are: (1) a continuous oxide layer can be formed with a smaller dose, resulting in a faster and more economical SIMOX process; (2) introduction of contaminants is reduced because of reduced implantation time; and (3) the process is viable over a much wider range of implantation facilities. This process should have a great impact on production of SOI for military and commercial purposes not only because of reduced cost due to reducing implantation time by an order of magnitude, but also because it provides a means to produce SIMOX structures with an ultrathin SiO2 layer.

Original languageEnglish (US)
Pages117-118
Number of pages2
StatePublished - 1989
EventIEEE SOS/SOI Technology Conference 1989 - Stateline, NV, USA
Duration: Oct 3 1989Oct 5 1989

Other

OtherIEEE SOS/SOI Technology Conference 1989
CityStateline, NV, USA
Period10/3/8910/5/89

ASJC Scopus subject areas

  • Engineering(all)

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    Namavar, F., Cortesi, E., Buchanan, B., & Sioshansi, P. (1989). Low energy SIMOX (LES). 117-118. Paper presented at IEEE SOS/SOI Technology Conference 1989, Stateline, NV, USA, .