Abstract
The resistance varies as T2 over the range of T from Tc to nearly 40 K, in sintered, sputtered and evaporated thin film CuxMo6S8, and in sputtered PbMo6S8 films. In sintered PbMo6S8 the resistance varies as T. These results can neither be explained by existing theory for PbMo6S8, nor by a Mo2S3 phase argument.
Original language | English (US) |
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Pages (from-to) | 571-574 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 27 |
Issue number | 5 |
DOIs | |
State | Published - Aug 1978 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry