Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon

S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, M. Schubert, M. Lorenz, M. Grundmann

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

C-axis oriented ZnO thin films were grown on silicon (100) and (111) substrates by pulsed laser deposition. Low temperature photoluminescence spectra show besides the peaks of free excitons, of defect bound excitons, and of a donor-acceptor pair transition a new doublet at 3.328/3.332 eV. The doublet seems to originate from the columnar textured ZnO film structure. A corresponding structural dependence of the broadening parameter of the infrared dielectric functions was derived from spectroscopic ellipsometry in the spectral range from 380 to 1200 cm- 1. The wave numbers of the E1 transverse optical and A1 longitudinal optical phonon modes of the ZnO films on silicon are determined to be 406 and 573 cm- 1, respectively. These values are slightly smaller than those of single-crystalline ZnO thin films on sapphire.

Original languageEnglish (US)
Pages (from-to)234-239
Number of pages6
JournalThin Solid Films
Volume496
Issue number2
DOIs
StatePublished - Feb 21 2006

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Keywords

  • Infrared ellipsometry
  • Luminescence
  • Pulsed laser deposition
  • Thin films
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Heitsch, S., Bundesmann, C., Wagner, G., Zimmermann, G., Rahm, A., Hochmuth, H., Benndorf, G., Schmidt, H., Schubert, M., Lorenz, M., & Grundmann, M. (2006). Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon. Thin Solid Films, 496(2), 234-239. https://doi.org/10.1016/j.tsf.2005.08.305