Low-Voltage Domain-Wall LiNbO3Memristors

P. Chaudhary, H. Lu, A. Lipatov, Z. Ahmadi, J. P.V. McConville, A. Sokolov, J. E. Shield, A. Sinitskii, J. M. Gregg, A. Gruverman

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Application of conducting ferroelectric domain walls (DWs) as functional elements may facilitate development of conceptually new resistive switching devices. In a conventional approach, several orders of magnitude change in resistance can be achieved by controlling the DW density using supercoercive voltage. However, a deleterious characteristic of this approach is high-energy cost of polarization reversal due to high leakage current. Here, we demonstrate a new approach based on tuning the conductivity of DWs themselves rather than on domain rearrangement. Using LiNbO3 capacitors with graphene, we show that resistance of a device set to a polydomain state can be continuously tuned by application of subcoercive voltage. The tuning mechanism is based on the reversible transition between the conducting and insulating states of DWs. The developed approach allows an energy-efficient control of resistance without the need for domain structure modification. The developed memristive devices are promising for multilevel memories and neuromorphic computing applications.

Original languageEnglish (US)
Pages (from-to)5873-5878
Number of pages6
JournalNano Letters
Issue number8
StatePublished - Aug 12 2020


  • conducting domain walls
  • ferroelectric
  • lithium niobate
  • memristor

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


Dive into the research topics of 'Low-Voltage Domain-Wall LiNbO3Memristors'. Together they form a unique fingerprint.

Cite this