Luminescence at 1539 nm from erbium and oxygen implanted GaN

J. T. Torvik; C. H. Qiu; R. J. Feuerstein; J. I. Pankove; F. Namavar

Luminescence at 1539 nm from erbium and oxygen implanted GaN

J. T. Torvik, C. H. Qiu, R. J. Feuerstein, J. I. Pankove, F. Namavar

Orthopaedic Surgery & Rehabilitation

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Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.

Original language	English (US)
Pages	394-397
Number of pages	4
State	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: Dec 8 1996 → Dec 11 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	12/8/96 → 12/11/96

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Luminescence at 1539 nm from erbium and oxygen implanted GaN",

abstract = "Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.",

author = "Torvik, {J. T.} and Qiu, {C. H.} and Feuerstein, {R. J.} and Pankove, {J. I.} and F. Namavar",

year = "1996",

language = "English (US)",

pages = "394--397",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

TY - CONF

T1 - Luminescence at 1539 nm from erbium and oxygen implanted GaN

AU - Torvik, J. T.

AU - Qiu, C. H.

AU - Feuerstein, R. J.

AU - Pankove, J. I.

AU - Namavar, F.

PY - 1996

Y1 - 1996

N2 - Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.

AB - Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.

UR - http://www.scopus.com/inward/record.url?scp=0030376953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030376953&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030376953

SP - 394

EP - 397

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Luminescence at 1539 nm from erbium and oxygen implanted GaN

Abstract

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ASJC Scopus subject areas

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