Luminescence at 1539 nm from erbium and oxygen implanted GaN

J. T. Torvik, C. H. Qiu, R. J. Feuerstein, J. I. Pankove, F. Namavar

Research output: Contribution to conferencePaper

Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.

Original languageEnglish (US)
Pages394-397
Number of pages4
Publication statusPublished - Dec 1 1996
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: Dec 8 1996Dec 11 1996

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period12/8/9612/11/96

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Torvik, J. T., Qiu, C. H., Feuerstein, R. J., Pankove, J. I., & Namavar, F. (1996). Luminescence at 1539 nm from erbium and oxygen implanted GaN. 394-397. Paper presented at Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .