Abstract
Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.
Original language | English (US) |
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Pages | 394-397 |
Number of pages | 4 |
State | Published - 1996 |
Event | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: Dec 8 1996 → Dec 11 1996 |
Other
Other | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD |
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City | Canberra, Aust |
Period | 12/8/96 → 12/11/96 |
ASJC Scopus subject areas
- General Engineering