Abstract
The GaN thin film was grown on a sapphire substrate using low pressure metal organic chemical vapor deposition from triethyl-gallium and ammonia at 1050°C. Both Er and oxygen were implanted to a concentration of approximately 1020 cm-3. Oxygen bonding puts the Er in a 3+ state, which is necessary for luminescence. Following implantation, the GaN:Er was annealed at 900°C for one hour in an ammonia atmosphere. The wafer was then placed in a cryogenic cathodoluminescence (CL) measurement system and cooled to 5 K. The electron beam was 15 kV at 20 μA. A prism spectrometer with a lead sulphide (PbS) detector, chopper, and lock-in amplifier was used to find the 1.5 μm luminescence signal. A photomultiplier was used for the UV-visible part of the spectrum. Cathodoluminescence spectrum of Er3+ doped GaN is presented and discussed.
Original language | English (US) |
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Pages | 286-287 |
Number of pages | 2 |
State | Published - 1994 |
Event | Proceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth Duration: Aug 28 1994 → Sep 2 1994 |
Other
Other | Proceedings of the 5th European Quantum Electronics Conference |
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City | Amsterdam, Neth |
Period | 8/28/94 → 9/2/94 |
ASJC Scopus subject areas
- General Engineering