Luminescence studies of erbium-doped gallium nitride

C. H. Qiu, M. Leksono, J. T. Torvik, R. J. Feuerstein, J. I. Pankove, F. Namavar

Research output: Contribution to conferencePaper

Abstract

The GaN thin film was grown on a sapphire substrate using low pressure metal organic chemical vapor deposition from triethyl-gallium and ammonia at 1050°C. Both Er and oxygen were implanted to a concentration of approximately 1020 cm-3. Oxygen bonding puts the Er in a 3+ state, which is necessary for luminescence. Following implantation, the GaN:Er was annealed at 900°C for one hour in an ammonia atmosphere. The wafer was then placed in a cryogenic cathodoluminescence (CL) measurement system and cooled to 5 K. The electron beam was 15 kV at 20 μA. A prism spectrometer with a lead sulphide (PbS) detector, chopper, and lock-in amplifier was used to find the 1.5 μm luminescence signal. A photomultiplier was used for the UV-visible part of the spectrum. Cathodoluminescence spectrum of Er3+ doped GaN is presented and discussed.

Original languageEnglish (US)
Pages286-287
Number of pages2
Publication statusPublished - Dec 1 1994
EventProceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth
Duration: Aug 28 1994Sep 2 1994

Other

OtherProceedings of the 5th European Quantum Electronics Conference
CityAmsterdam, Neth
Period8/28/949/2/94

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Qiu, C. H., Leksono, M., Torvik, J. T., Feuerstein, R. J., Pankove, J. I., & Namavar, F. (1994). Luminescence studies of erbium-doped gallium nitride. 286-287. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, .