Magnetic noise in a low-power picotesla magnetoresistive sensor

S. H. Liou; David Sellmyer; Stephen E. Russek; Ranko Heindl; F. C.S. Da Silva; John Moreland; David P. Pappas; L. Yuan; J. Shen

doi:10.1109/ICSENS.2009.5398414

Magnetic noise in a low-power picotesla magnetoresistive sensor

S. H. Liou, David Sellmyer, Stephen E. Russek, Ranko Heindl, F. C.S. Da Silva, John Moreland, David P. Pappas, L. Yuan, J. Shen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

We present a design of a low power, compact, magnetoresistive sensor. The key features of the design are (1) decreasing the noise by the use of a 64 element magnetic tunnel junction (MTJ) bridge, (2) reducing the magnetic noise by annealing of the MTJ sensors in high magnetic field and a hydrogen environment, and (3) increasing the signal by the use of external low-noise magnetic flux concentrators. The field noise of our prototype magnetic sensor is approximately 4.5 pT/Hz^1/2 at 1 kHz, and 222 pT/Hz^1/2 at 1 Hz at room temperature. The magnetic sensor dissipates about 2 mW of power while operating at an applied voltage of 2 V.

Original language	English (US)
Title of host publication	IEEE Sensors 2009 Conference - SENSORS 2009
Pages	1848-1851
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2009.5398414
State	Published - 2009
Event	IEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand Duration: Oct 25 2009 → Oct 28 2009

Publication series

Name	Proceedings of IEEE Sensors

Other

Other	IEEE Sensors 2009 Conference - SENSORS 2009
Country/Territory	New Zealand
City	Christchurch
Period	10/25/09 → 10/28/09

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ICSENS.2009.5398414

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Liou, SH, Sellmyer, D, Russek, SE, Heindl, R, Da Silva, FCS, Moreland, J, Pappas, DP, Yuan, L & Shen, J 2009, Magnetic noise in a low-power picotesla magnetoresistive sensor. in IEEE Sensors 2009 Conference - SENSORS 2009., 5398414, Proceedings of IEEE Sensors, pp. 1848-1851, IEEE Sensors 2009 Conference - SENSORS 2009, Christchurch, New Zealand, 10/25/09. https://doi.org/10.1109/ICSENS.2009.5398414

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author = "Liou, {S. H.} and David Sellmyer and Russek, {Stephen E.} and Ranko Heindl and {Da Silva}, {F. C.S.} and John Moreland and Pappas, {David P.} and L. Yuan and J. Shen",

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AU - Liou, S. H.

AU - Sellmyer, David

AU - Russek, Stephen E.

AU - Heindl, Ranko

AU - Da Silva, F. C.S.

AU - Moreland, John

AU - Pappas, David P.

AU - Yuan, L.

AU - Shen, J.

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N2 - We present a design of a low power, compact, magnetoresistive sensor. The key features of the design are (1) decreasing the noise by the use of a 64 element magnetic tunnel junction (MTJ) bridge, (2) reducing the magnetic noise by annealing of the MTJ sensors in high magnetic field and a hydrogen environment, and (3) increasing the signal by the use of external low-noise magnetic flux concentrators. The field noise of our prototype magnetic sensor is approximately 4.5 pT/Hz1/2 at 1 kHz, and 222 pT/Hz1/2 at 1 Hz at room temperature. The magnetic sensor dissipates about 2 mW of power while operating at an applied voltage of 2 V.

AB - We present a design of a low power, compact, magnetoresistive sensor. The key features of the design are (1) decreasing the noise by the use of a 64 element magnetic tunnel junction (MTJ) bridge, (2) reducing the magnetic noise by annealing of the MTJ sensors in high magnetic field and a hydrogen environment, and (3) increasing the signal by the use of external low-noise magnetic flux concentrators. The field noise of our prototype magnetic sensor is approximately 4.5 pT/Hz1/2 at 1 kHz, and 222 pT/Hz1/2 at 1 Hz at room temperature. The magnetic sensor dissipates about 2 mW of power while operating at an applied voltage of 2 V.

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Magnetic noise in a low-power picotesla magnetoresistive sensor

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