Magnetism and topological Hall effect in antiferromagnetic Ru2MnSn-based Heusler compounds

Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xing Zhong Li, Cai Zhuang Wang, Kai Ming Ho, David J. Sellmyer

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Heusler compounds and alloys based on them are of great recent interest because they exhibit a wide variety of spin structures, magnetic properties, and electron-transport phenomena. Their properties are tunable by alloying and we have investigated L21-orderd compound Ru2MnSn and its alloys by varying the atomic Mn:Sn composition. While antiferromagnetic ordering with a Néel temperature of 361 K was observed in Ru2MnSn, the Mn-poor Ru2Mn0.8Sn1.2 alloy exhibits properties of a diluted antiferromagnet in which there are localized regions of uncompensated Mn spins. Furthermore, a noncoplanar spin structure, evident from a topological Hall-effect contribution to the room-temperature Hall resistivity, is realized in Ru2Mn0.8Sn1.2. Our combined experimental and theoretical analysis shows that in the Ru2Mn0.8Sn1.2 alloy, the magnetic properties can be explained in terms of a noncoplanar antiferromagnetic scissor mode, which creates a small net magnetization in a magnetic field and subsequently yields a Berry curvature with a strong topological Hall effect.

Original languageEnglish (US)
Article number168104
JournalJournal of Magnetism and Magnetic Materials
Volume537
DOIs
StatePublished - Nov 1 2021

Keywords

  • Antiferromagnetism
  • Heusler compounds
  • Topological Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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