Magnetoresistance study in thin zig zag NiFe wires

J. L. Tsai, S. F. Lee, Y. D. Yao, C. Yu, S. H. Liou

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Thickness dependence on the domain wall resistivity of zig zag thin permalloy wires was studied from 10 to 300 K. The maximum domain wall resistivity was obtained in wire with 100-nm-film thickness. The multidomain state resistivity was 14.29 μcm, while single-domain state resistivity was 14.36 μcm at 10 K. The ratio of domain wall magnetoresistance was measured to be 0.034%, 0.112%, and 0.258%, and the magnetic field where the domain wall started to switch was measured as -70, -40, and +80 Oe for wires with thicknesses of 20, 40, and 100 nm, respectively, at 250 K. Domain wall resistivity was nearly independent of temperature for wire with 40-nm-film thickness but varied significantly with temperature for 100-nm-thick wire between 10 and 300 K.

Original languageEnglish (US)
Pages (from-to)7983-7985
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
StatePublished - May 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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