Material and electrical characterization of HfO2 films for MIM capacitors application

Hang Hu, Chunxiang Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, N. Yakovlev

Research output: Contribution to journalConference articlepeer-review


Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼3.0 fF/μM2, a low leakage current of 2×10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

Original languageEnglish (US)
Pages (from-to)363-369
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
Externally publishedYes
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: Apr 21 2003Apr 25 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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