@inproceedings{5bf45fdef8394130b8149ced1eb49aad,
title = "Materials characterization using THz ellipsometry",
abstract = "We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.",
author = "T. Hofmann and Herzinger, {C. M.} and Woollam, {J. A.} and M. Schubert",
year = "2009",
doi = "10.1557/proc-1163-k08-04",
language = "English (US)",
isbn = "9781615677801",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "19--24",
booktitle = "Materials Research for Terahertz Technology Development",
note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",
}