Materials characterization using THz ellipsometry

T. Hofmann; C. M. Herzinger; J. A. Woollam; M. Schubert

doi:10.1557/proc-1163-k08-04

Materials characterization using THz ellipsometry

T. Hofmann, C. M. Herzinger, J. A. Woollam, M. Schubert

Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 10¹⁵ cm^-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.

Original language	English (US)
Title of host publication	Materials Research for Terahertz Technology Development
Publisher	Materials Research Society
Pages	19-24
Number of pages	6
ISBN (Print)	9781615677801
DOIs	https://doi.org/10.1557/proc-1163-k08-04
State	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 13 2009 → Apr 17 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1163
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/13/09 → 4/17/09

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-1163-k08-04

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Hofmann, T, Herzinger, CM, Woollam, JA & Schubert, M 2009, Materials characterization using THz ellipsometry. in Materials Research for Terahertz Technology Development. Materials Research Society Symposium Proceedings, vol. 1163, Materials Research Society, pp. 19-24, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/13/09. https://doi.org/10.1557/proc-1163-k08-04

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abstract = "We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.",

author = "T. Hofmann and Herzinger, {C. M.} and Woollam, {J. A.} and M. Schubert",

year = "2009",

doi = "10.1557/proc-1163-k08-04",

language = "English (US)",

isbn = "9781615677801",

series = "Materials Research Society Symposium Proceedings",

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AU - Hofmann, T.

AU - Herzinger, C. M.

AU - Woollam, J. A.

AU - Schubert, M.

PY - 2009

Y1 - 2009

N2 - We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.

AB - We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.

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U2 - 10.1557/proc-1163-k08-04

DO - 10.1557/proc-1163-k08-04

M3 - Conference contribution

AN - SCOPUS:77950787798

SN - 9781615677801

T3 - Materials Research Society Symposium Proceedings

SP - 19

EP - 24

BT - Materials Research for Terahertz Technology Development

PB - Materials Research Society

T2 - 2009 MRS Spring Meeting

Y2 - 13 April 2009 through 17 April 2009

ER -

Materials characterization using THz ellipsometry

Abstract

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