Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN

A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, M. Schubert

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11 Scopus citations


Free-standing GaN of -330 μm thickness with low defect density was prepared by hydride vapor-phase epitaxy (HVPE) on sapphire in a vertical atmospheric-pressure reactor and a subsequent laser-induced liftoff process. The structural and optical properties of the material were assessed by various characterization techniques, like X-ray diffraction, photo- and cathodoluminescence, spectroscopic ellipsometry, positron annihilation spectroscopy, and transmission electron microscopy. Here, we focus on μ-Raman scattering profiling studies providing the vertical strain distribution and the evolution of the crystalline quality with increasing layer thickness. Profiles of the free-carrier concentration are obtained from monitoring the LO-phonon plasmon coupled mode. Comparative investigations are performed on the material before and after separation of the sapphire substrate. The GaN material presented here is well capable of serving as a substrate for further homoepitaxial strain-relaxed and crack-free growth needed for fabrication of high-quality III-nitride device heterostructures.

Original languageEnglish (US)
Pages (from-to)2773-2776
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Issue number12
StatePublished - Sep 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kasic, A., Gogova, D., Larsson, H., Hemmingsson, C., Ivanov, I., Monemar, B., Bundesmann, C., & Schubert, M. (2004). Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN. Physica Status Solidi (A) Applied Research, 201(12), 2773-2776. https://doi.org/10.1002/pssa.200405013