Abstract
Microstructures of crystalline nickel disilicide thin films formed on SIMOX (separation by implantation of oxygen) Si-on-oxide substrates were analyzed using electron microscopy. The samples were examined both in the top-down plane-view orientation and in cross section along a [110] direction. The nickel silicide films were formed through thermal reaction of metallic nickel deposited on the top Si layer of the SIMOX substrates. The results were compared with epitaxial NiSi2 layers grown on single crystal silicon substrates. Twin boundaries were observed at the silicide/oxide interface. The oxide layer acts as a diffusion barrier which prevents nickel from diffusing into the substrate resulting in uniform NiSi2 on a SiO2/Si substrate.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2694-2696 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 21 |
| DOIs | |
| State | Published - 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)