A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photo-current, surface photovoltage, transient decay, and luminescence.
|Original language||English (US)|
|Number of pages||40|
|Journal||Applied physics communications|
|State||Published - Jan 1 1982|
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