TY - JOUR
T1 - MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS
T2 - A REVIEW AND COMPARISON OF TECHNIQUES.
AU - Khan, A. Azim
AU - Woollam, John A.
AU - Hermann, Allen M.
PY - 1982
Y1 - 1982
N2 - A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photo-current, surface photovoltage, transient decay, and luminescence.
AB - A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photo-current, surface photovoltage, transient decay, and luminescence.
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M3 - Article
AN - SCOPUS:0020250410
VL - 2
SP - 17
EP - 56
JO - Applied physics communications
JF - Applied physics communications
SN - 0277-9374
IS - 1-2
ER -