Mobility in single crystal Bi2Se3

J. A. Woollam; H. Beale; I. L. Spain

doi:10.1016/0375-9601(72)90908-5

Mobility in single crystal Bi₂Se₃

J. A. Woollam, H. Beale, I. L. Spain

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Galvanomagnetic effects are measured in p-type Bi₂Se₃ in magnetic fields to 8 T. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with ∼10²⁵ m^-3 total carrier concentration.

Original language	English (US)
Pages (from-to)	319-320
Number of pages	2
Journal	Physics Letters A
Volume	41
Issue number	4
DOIs	https://doi.org/10.1016/0375-9601(72)90908-5
State	Published - Oct 9 1972
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/0375-9601(72)90908-5

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title = "Mobility in single crystal Bi2Se3",

abstract = "Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 T. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with ∼1025 m-3 total carrier concentration.",

author = "Woollam, {J. A.} and H. Beale and Spain, {I. L.}",

year = "1972",

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doi = "10.1016/0375-9601(72)90908-5",

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publisher = "Elsevier B.V.",

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T1 - Mobility in single crystal Bi2Se3

AU - Woollam, J. A.

AU - Beale, H.

AU - Spain, I. L.

PY - 1972/10/9

Y1 - 1972/10/9

N2 - Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 T. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with ∼1025 m-3 total carrier concentration.

AB - Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 T. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with ∼1025 m-3 total carrier concentration.

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U2 - 10.1016/0375-9601(72)90908-5

DO - 10.1016/0375-9601(72)90908-5

M3 - Article

AN - SCOPUS:0002790768

SN - 0375-9601

VL - 41

SP - 319

EP - 320

JO - Physics Letters A

JF - Physics Letters A

IS - 4

ER -

Mobility in single crystal Bi₂Se₃

Abstract

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