Abstract
Three models for the dielectric function εx(hν) of AlxGa1-xAs are reviewed. All are based on measured optical constants at discrete compositions. The validity of each model near critical point energies, and otherwise, is evaluated. Only the energy-shift model is appropriate over the entire available spectrum (1.5-6.0 eV), including the band-gap (E0) region.
Original language | English (US) |
---|---|
Pages (from-to) | 5925-5926 |
Number of pages | 2 |
Journal | Journal of Applied Physics |
Volume | 68 |
Issue number | 11 |
DOIs | |
State | Published - 1990 |
ASJC Scopus subject areas
- Physics and Astronomy(all)