Abstract
The effect of high energy ion bombardment on the structure of sputtered niobium films has been studied. The 1000 Å films were sputtered onto silicon substrates. The films were oriented with a [110] fiber texture and were found to have a monoclinically distorted cell characteristic of compressive stress, where the stress direction is parallel to the film surface. Bombardment with 300 keV Xe+ ions, which for the most part did not reach the silicon interface, merely expanded the volume of the distorted as-sputtered niobium unit cell. However, bombardment with 600 keV Xe+ ions, which have a mean range extending to the interface, relaxed the unit cell toward the configuration of a cubic geometry.
Original language | English (US) |
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Pages (from-to) | 239-247 |
Number of pages | 9 |
Journal | Thin Solid Films |
Volume | 120 |
Issue number | 3 |
DOIs | |
State | Published - Oct 19 1984 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry