Molecular dynamics simulation of vapor condensation on nanotubes

Vapor condensation on silicon nanotubes has been simulated by classical molecular dynamics to understand how the nucleation and condensation process for pores is affected. Two different nanotube aspect ratios were examined to see if there are growth rate changes. The rate for the two different types of nanotubes did not show significant variation meaning that the aspect ratio is an insignificant factor to enhance condensation. This result is consistent with previous nanorod studies. The supersaturated vapor gathered both inside and outside of the tube. Unlike the growth rate, however, the occurrence of homogeneous nucleation was hindered contrary to other basic geometries in previous studies.