Nano-scale morphology and crystallography of laser-deposited TiN thin films

Hai Dan Wang, Yong Feng Lu, Zhi Hong Mai, Zhong Min Ren

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Titanium nitride (TIN) thin films were deposited on hydrogen-terminated silicon (100) substrates by pulsed laser ablation of a ceramic TiN target (purity: 99.9%). The crystallography and properties of the thin films are related to the substrate temperature. In the investigation, scanning tunneling microscopy (STM), X-ray diffraction (XRD) and nanoindentation were used. Nano-scale morphology of the thin films deposited at 600 °C was observed by STM using a platinum tip. The STM image showed that the TiN embryos have a uniform size of approximately 17 nm and grow into large clusters. The films grown at 600 °C have a full-width at half maximum of the TiN (200) peak in the XRD spectrum close to 0.50°. The hardness of the thin films deposited at 600 °C was as high as 26 GPa.

Original languageEnglish (US)
Pages (from-to)6268-6271
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number11
DOIs
StatePublished - Nov 2000

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Nano-scale morphology and crystallography of laser-deposited TiN thin films'. Together they form a unique fingerprint.

  • Cite this