TY - JOUR
T1 - Nanodomain Engineering for Programmable Ferroelectric Devices
AU - Lipatov, Alexey
AU - Li, Tao
AU - Vorobeva, Nataliia S.
AU - Sinitskii, Alexander
AU - Gruverman, Alexei
N1 - Funding Information:
This work was supported by the National Science Foundation (NSF) through the Nebraska Materials Research Science and Engineering Center (MRSEC) (grant no. DMR-1420645). This research was performed in part in the Nebraska Nanoscale Facility: National Nanotechnology Coordinated Infrastructure, which was supported by the NSF (ECCS-1542182) and the Nebraska Research Initiative.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/5/8
Y1 - 2019/5/8
N2 - We introduce a concept of programmable ferroelectric devices composed of two-dimensional (2D) and ferroelectric (FE) materials. It enables precise modulation of the in-plane conductivity of a 2D channel material through nanoengineering FE domains with out-of-plane polarization. The functionality of these new devices has been demonstrated using field-effect transistors (FETs) fabricated with monolayer molybdenum disulfide (MoS 2 ) channels on the Pb(Zr,Ti)O 3 substrates. Using piezoresponse force microscopy (PFM), we show that local switching of FE polarization by a conductive probe can be used to tune the conductivity of the MoS 2 channel. Specifically, patterning of the nanoscale domains with downward polarization creates conductive paths in a resistive MoS 2 channel so that the conductivity of an FET is determined by the number and length of the paths connecting source and drain electrodes. In addition to the device programmability, we demonstrate the device ON/OFF cyclic endurance by successive writing and erasing of conductive paths in a MoS 2 channel. These findings may inspire the development of advanced energy-efficient programmable synaptic devices based on a combination of 2D and FE materials.
AB - We introduce a concept of programmable ferroelectric devices composed of two-dimensional (2D) and ferroelectric (FE) materials. It enables precise modulation of the in-plane conductivity of a 2D channel material through nanoengineering FE domains with out-of-plane polarization. The functionality of these new devices has been demonstrated using field-effect transistors (FETs) fabricated with monolayer molybdenum disulfide (MoS 2 ) channels on the Pb(Zr,Ti)O 3 substrates. Using piezoresponse force microscopy (PFM), we show that local switching of FE polarization by a conductive probe can be used to tune the conductivity of the MoS 2 channel. Specifically, patterning of the nanoscale domains with downward polarization creates conductive paths in a resistive MoS 2 channel so that the conductivity of an FET is determined by the number and length of the paths connecting source and drain electrodes. In addition to the device programmability, we demonstrate the device ON/OFF cyclic endurance by successive writing and erasing of conductive paths in a MoS 2 channel. These findings may inspire the development of advanced energy-efficient programmable synaptic devices based on a combination of 2D and FE materials.
KW - Molybdenum disulfide
KW - domain patterning
KW - ferroelectric memory
KW - field-effect transistor (FET)
KW - lead zirconium titanate
UR - http://www.scopus.com/inward/record.url?scp=85064334611&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85064334611&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.9b00673
DO - 10.1021/acs.nanolett.9b00673
M3 - Article
C2 - 30943040
AN - SCOPUS:85064334611
SN - 1530-6984
VL - 19
SP - 3194
EP - 3198
JO - Nano Letters
JF - Nano Letters
IS - 5
ER -