Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

J. Šik; M. Schubert; G. Leibiger; V. Gottschalch; G. Kirpal; J. Humlíček

doi:10.1063/1.126497

Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

J. Šik, M. Schubert, G. Leibiger, V. Gottschalch, G. Kirpal, J. Humlíček

Electrical & Computer Engineering

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Abstract

The optical properties of GaAs/GaN_xAS_1-x. superlattice structures grown by metal-organic vapor-phase epitaxy are studied by variable angle-of-incidence spectroscopic ellipsometry for photon energies from 0.75 to 1.55 eV. We employ Adachi's critical-point composite model, and we report the direct-band-gap energy E₀ and the complex index of refraction of the GaN_xAs_1-x sublayers for x≤3.3% from analysis of the ellipsometry data. We observe a strong redshift of E₀ with increase in x, and a strong decrease of the E₀ transition amplitude. The E₀ values obtained for the superlattice structures are in good agreement with photoluminescence results, and also with previous reports from single epilayers. Structure, composition, layer thickness, and parallel and perpendicular lattice mismatch of the samples are studied by transmission electron microscopy and high-resolution x-ray diffraction investigations.

Original language	English (US)
Pages (from-to)	2859-2861
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	20
DOIs	https://doi.org/10.1063/1.126497
State	Published - May 15 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry",

abstract = "The optical properties of GaAs/GaNxAS1-x. superlattice structures grown by metal-organic vapor-phase epitaxy are studied by variable angle-of-incidence spectroscopic ellipsometry for photon energies from 0.75 to 1.55 eV. We employ Adachi's critical-point composite model, and we report the direct-band-gap energy E0 and the complex index of refraction of the GaNxAs1-x sublayers for x≤3.3% from analysis of the ellipsometry data. We observe a strong redshift of E0 with increase in x, and a strong decrease of the E0 transition amplitude. The E0 values obtained for the superlattice structures are in good agreement with photoluminescence results, and also with previous reports from single epilayers. Structure, composition, layer thickness, and parallel and perpendicular lattice mismatch of the samples are studied by transmission electron microscopy and high-resolution x-ray diffraction investigations.",

author = "J. {\v S}ik and M. Schubert and G. Leibiger and V. Gottschalch and G. Kirpal and J. Huml{\'i}{\v c}ek",

year = "2000",

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doi = "10.1063/1.126497",

language = "English (US)",

volume = "76",

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T1 - Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

AU - Šik, J.

AU - Schubert, M.

AU - Leibiger, G.

AU - Gottschalch, V.

AU - Kirpal, G.

AU - Humlíček, J.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - The optical properties of GaAs/GaNxAS1-x. superlattice structures grown by metal-organic vapor-phase epitaxy are studied by variable angle-of-incidence spectroscopic ellipsometry for photon energies from 0.75 to 1.55 eV. We employ Adachi's critical-point composite model, and we report the direct-band-gap energy E0 and the complex index of refraction of the GaNxAs1-x sublayers for x≤3.3% from analysis of the ellipsometry data. We observe a strong redshift of E0 with increase in x, and a strong decrease of the E0 transition amplitude. The E0 values obtained for the superlattice structures are in good agreement with photoluminescence results, and also with previous reports from single epilayers. Structure, composition, layer thickness, and parallel and perpendicular lattice mismatch of the samples are studied by transmission electron microscopy and high-resolution x-ray diffraction investigations.

AB - The optical properties of GaAs/GaNxAS1-x. superlattice structures grown by metal-organic vapor-phase epitaxy are studied by variable angle-of-incidence spectroscopic ellipsometry for photon energies from 0.75 to 1.55 eV. We employ Adachi's critical-point composite model, and we report the direct-band-gap energy E0 and the complex index of refraction of the GaNxAs1-x sublayers for x≤3.3% from analysis of the ellipsometry data. We observe a strong redshift of E0 with increase in x, and a strong decrease of the E0 transition amplitude. The E0 values obtained for the superlattice structures are in good agreement with photoluminescence results, and also with previous reports from single epilayers. Structure, composition, layer thickness, and parallel and perpendicular lattice mismatch of the samples are studied by transmission electron microscopy and high-resolution x-ray diffraction investigations.

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DO - 10.1063/1.126497

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JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -

Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

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