Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry

G. Leibiger; V. Gottschalch; B. Rheinländer; J. Šik; M. Schubert

doi:10.1063/1.1309021

Nitrogen dependence of the GaAsN interband critical points E₁ and E₁+Δ₁ determined by spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, B. Rheinländer, J. Šik, M. Schubert

Electrical & Computer Engineering

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Abstract

The effects of the nitrogen concentrations on the E₁ and E₁ + Δ₁ transitions of tensile-strained GaAs_1-yN_y (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E₀, we observe linearly blueshifted E₁ and E₁ + Δ₁ transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E₁ energy is well explained by the sum of the effects of biaxial (001) strain and alloying.

Original language	English (US)
Pages (from-to)	1650-1652
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	11
DOIs	https://doi.org/10.1063/1.1309021
State	Published - Sep 11 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry",

abstract = "The effects of the nitrogen concentrations on the E1 and E1 + Δ1 transitions of tensile-strained GaAs1-yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1 + Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying.",

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T1 - Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry

AU - Leibiger, G.

AU - Gottschalch, V.

AU - Rheinländer, B.

AU - Šik, J.

AU - Schubert, M.

PY - 2000/9/11

Y1 - 2000/9/11

N2 - The effects of the nitrogen concentrations on the E1 and E1 + Δ1 transitions of tensile-strained GaAs1-yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1 + Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying.

AB - The effects of the nitrogen concentrations on the E1 and E1 + Δ1 transitions of tensile-strained GaAs1-yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1 + Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying.

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Nitrogen dependence of the GaAsN interband critical points E₁ and E₁+Δ₁ determined by spectroscopic ellipsometry

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