Nonuniform Debye Temperatures in Quasi-One-Dimensional Transition-Metal Trichalcogenides

Archit Dhingra, Alexey Lipatov, Michael J. Loes, Alexander Sinitskii, Peter A. Dowben

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The Debye-Waller factor plots for S 2p core-level, based on temperature-dependent X-ray photoemission measurements on quasi-one-dimensional (1D) chains of TiS3, suggest effective Debye temperatures of the two different types of sulfur coordination are 464 ± 35 K and 547 ± 26 K, respectively. The effective Debye temperatures for sulfur in ZrS3 are found to be 558 ± 30 K and 667 ± 35 K, again, for the two different types of sulfur coordination. The differences in the Debye temperatures for the different sulfur species in both TiS3 and ZrS3, are consistent with the existence of inequivalent sulfur environments. Moreover, considerably higher Debye temperature for S 2p core-level of ZrS3, in comparison with that of TiS3, indicates that there is a likely decrease in phonon scattering of carriers in ZrS3 compared to TiS3. This conclusion is supported by a temperature-dependent maximum in the mobility for ZrS3, that is at a higher temperature than seen for TiS3 and a steeper decline in mobility for TiS3, compared to ZrS3. Because of the relatively high Debye temperatures, there are only a limited number of soft modes for the quasi-one-dimensional (1D) layered trichalcogenide semiconductors of TiS3 and ZrS3.

Original languageEnglish (US)
Pages (from-to)414-419
Number of pages6
JournalACS Materials Letters
Volume3
Issue number4
DOIs
StatePublished - Apr 5 2021

ASJC Scopus subject areas

  • General Chemical Engineering
  • Biomedical Engineering
  • General Materials Science

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