Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

Timothy J. Reece, Stephen Ducharme, A. V. Sorokin, Matt Poulsen

Research output: Contribution to journalArticle

140 Scopus citations

Abstract

The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.

Original languageEnglish (US)
Pages (from-to)142-144
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number1
DOIs
StatePublished - Jan 6 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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