The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)