Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

Timothy J. Reece; Stephen Ducharme; A. V. Sorokin; Matt Poulsen

doi:10.1063/1.1533844

Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

Timothy J. Reece, Stephen Ducharme, A. V. Sorokin, Matt Poulsen

Physics & Physical Science

Research output: Contribution to journal › Article › peer-review

148 Scopus citations

Abstract

The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.

Original language	English (US)
Pages (from-to)	142-144
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.1533844
State	Published - Jan 6 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.",

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AB - The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.

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Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

Abstract

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