Nonvolatile two-terminal molecular memory

Jason Snodgrass, Glen Kennedy, Wai Ning Mei, Renat Sabirianov

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We propose a nonvolatile two-terminal memory device with two resistance states based on the molecular tunnel junctions. This tunnel junction is composed of one or a few monolayers of polar molecules sandwiched between two electrodes made of materials with different screening length. As a prototype model system we study a rare earth endohedral metallofullerene molecule with reversible dipole moment sandwiched between metal and semiconducting electrodes, forming a double barrier junction. We use the Thomas-Fermi model to calculate the potential profile across the device. Calculated tunneling conductance through the proposed structure changes by order of magnitude upon the reversal of the dipole orientation (due to the applied voltage). This effect originates from the difference in potential profiles seen by tunneling electrons for two opposite dipole orientations.

Original languageEnglish (US)
Title of host publicationNanostructured and Patterned Materials for Information Storage
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781604234138
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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