TY - GEN
T1 - Nonvolatile two-terminal molecular memory
AU - Snodgrass, Jason
AU - Kennedy, Glen
AU - Mei, Wai Ning
AU - Sabirianov, Renat
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - We propose a nonvolatile two-terminal memory device with two resistance states based on the molecular tunnel junctions. This tunnel junction is composed of one or a few monolayers of polar molecules sandwiched between two electrodes made of materials with different screening length. As a prototype model system we study a rare earth endohedral metallofullerene molecule with reversible dipole moment sandwiched between metal and semiconducting electrodes, forming a double barrier junction. We use the Thomas-Fermi model to calculate the potential profile across the device. Calculated tunneling conductance through the proposed structure changes by order of magnitude upon the reversal of the dipole orientation (due to the applied voltage). This effect originates from the difference in potential profiles seen by tunneling electrons for two opposite dipole orientations.
AB - We propose a nonvolatile two-terminal memory device with two resistance states based on the molecular tunnel junctions. This tunnel junction is composed of one or a few monolayers of polar molecules sandwiched between two electrodes made of materials with different screening length. As a prototype model system we study a rare earth endohedral metallofullerene molecule with reversible dipole moment sandwiched between metal and semiconducting electrodes, forming a double barrier junction. We use the Thomas-Fermi model to calculate the potential profile across the device. Calculated tunneling conductance through the proposed structure changes by order of magnitude upon the reversal of the dipole orientation (due to the applied voltage). This effect originates from the difference in potential profiles seen by tunneling electrons for two opposite dipole orientations.
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U2 - 10.1557/proc-0961-o03-07
DO - 10.1557/proc-0961-o03-07
M3 - Conference contribution
AN - SCOPUS:40949101813
SN - 9781604234138
T3 - Materials Research Society Symposium Proceedings
SP - 213
EP - 218
BT - Nanostructured and Patterned Materials for Information Storage
PB - Materials Research Society
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -