Nonvolatile voltage controlled molecular spin state switching

G. Hao, A. Mosey, X. Jiang, A. J. Yost, K. R. Sapkota, G. T. Wang, X. Zhang, J. Zhang, A. T. N'Diaye, R. Cheng, X. Xu, P. A. Dowben

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. The result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

Original languageEnglish (US)
Article number032901
JournalApplied Physics Letters
Issue number3
StatePublished - Jan 21 2019

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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