Novel magnetic nanostructured multilayer for high sensitive magnetoresistive sensor

Xiaolu Yin, Sy Hwang Liou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistive sensor. In this paper, we compare two magnetic tunnel junctions with different free layer thicknesses that have very different magnetic characters, such as magnetization reversal behavior, magnetic corecivity, magnetic saturation field, and tunnel magnetoreistance ratio etc. In this study, we show a sensor with a sensitivity as high as 1916 %/mT. This magnetic sensor only dissipates 20 μW of power while operating under an applied voltage of 1 V.

Original languageEnglish (US)
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
StatePublished - Dec 1 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China
Duration: Oct 28 2012Oct 31 2012

Publication series

NameProceedings of IEEE Sensors

Conference

Conference11th IEEE SENSORS 2012 Conference
CountryTaiwan, Province of China
CityTaipei
Period10/28/1210/31/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Novel magnetic nanostructured multilayer for high sensitive magnetoresistive sensor'. Together they form a unique fingerprint.

  • Cite this

    Yin, X., & Liou, S. H. (2012). Novel magnetic nanostructured multilayer for high sensitive magnetoresistive sensor. In IEEE SENSORS 2012 - Proceedings [6411027] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411027