Nuclear resonance profiling of high dose implants of Al in Si

F. Namavar, J. I. Budnick, F. H. Sanchez, F. A. Otter

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We have applied nuclear resonance profiling (NRP) techniques to determine the depth distribution of implanted Al into Si. For implantation of Al at 100 keV and at doses of up to 1018 Al/cm2, our results indicate that the depth distribution of Al implanted in an ultra-high vacuum (UHV) system (∼- -8 Torr) is independent of dose rate and target orientation. For a dose of 1018 Al/cm2 a single Al distribution was observed with an Al concentration of about 65% at peak while 85% of the implanted Al was retained in the Si target. On the other hand, the depth distribution of implanted Al in a diffusion pumped vacuum (DPV) system (∼- 10-6 Torr) was greatly influenced by dose rates and target orientation. For high dose rate implantation (40-50 μA/cm2) the depth distribution of Al appears to be bimodal or broadened and about 95% of the implanted Al is retained in the Si target. A peak Al concentration of up to 75% could be obtained.

Original languageEnglish (US)
Pages (from-to)357-360
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume7-8
Issue numberPART 1
DOIs
StatePublished - Mar 1985
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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