@article{e4f313f62ce44104af2e949344a05fc9,
title = "Nuclear resonance profiling of high dose implants of Al in Si",
abstract = "We have applied nuclear resonance profiling (NRP) techniques to determine the depth distribution of implanted Al into Si. For implantation of Al at 100 keV and at doses of up to 1018 Al/cm2, our results indicate that the depth distribution of Al implanted in an ultra-high vacuum (UHV) system (∼- -8 Torr) is independent of dose rate and target orientation. For a dose of 1018 Al/cm2 a single Al distribution was observed with an Al concentration of about 65% at peak while 85% of the implanted Al was retained in the Si target. On the other hand, the depth distribution of implanted Al in a diffusion pumped vacuum (DPV) system (∼- 10-6 Torr) was greatly influenced by dose rates and target orientation. For high dose rate implantation (40-50 μA/cm2) the depth distribution of Al appears to be bimodal or broadened and about 95% of the implanted Al is retained in the Si target. A peak Al concentration of up to 75% could be obtained.",
author = "F. Namavar and Budnick, {J. I.} and Sanchez, {F. H.} and Otter, {F. A.}",
note = "Funding Information: It has been known for some time [1,2] that implanta-tion in a poor vacuum system (= 10m6 Torr) results, in some cases, in the formation of a surface oxide or a carbon layer. A surface oxide or carbon layer may reduce surface sputtering, thus making it possible to achieve a higher concentration of implanted atoms. The effects and significance of a contaminant surface layer formed during implantation on the implantation processes have been recognized [2,3]. However, the number of reported papers which deal with the problem is very limited [3]. Furthermore, to date, no detailed studies have been reported for high dose implantation of metals into a Si system. Recently, we initiated a study to understand the effect of vacuum conditions on the composition and structure of implanted layers for high dose implantation of Al and Cr into Si [4,5]. Samples were prepared by implanting both metals in UHV( = lOmE Torr) and DPV (= 10v6 Tot-r) systems into Si (111) and Si (100) with doses of up to lo{\textquoteright}* ions/cm2. We have applied RBS, AES and X-ray analysis techniques to these studies. For the Al implanted samples, except those prepared in a DPV system (= 10m6 Torr) at a low dose rate (5 PA/cm{\textquoteright}), X-ray analysis indicates Al segregation. For the implantation of Al in a DPV * Supported in part by the Office of Naval Research and also by The University of Connecticut Research Foundation. ** On a fellowship from CONICET, Argentina.",
year = "1985",
month = mar,
doi = "10.1016/0168-583X(85)90581-6",
language = "English (US)",
volume = "7-8",
pages = "357--360",
journal = "Nuclear Inst. and Methods in Physics Research, B",
issn = "0168-583X",
publisher = "Elsevier B.V.",
number = "PART 1",
}