Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis

W. M. Paulson, R. I. Hegde, B. B. Doris, V. Kaushik, P. J. Tobin, J. Fitch, W. A. McGahan, J. A. Woollam

Research output: Contribution to journalConference article

2 Scopus citations


The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopic ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.

Original languageEnglish (US)
Pages (from-to)77-82
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Paulson, W. M., Hegde, R. I., Doris, B. B., Kaushik, V., Tobin, P. J., Fitch, J., McGahan, W. A., & Woollam, J. A. (1995). Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis. Materials Research Society Symposium - Proceedings, 355, 77-82.