Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis

W. M. Paulson; R. I. Hegde; B. B. Doris; V. Kaushik; P. J. Tobin; J. Fitch; W. A. McGahan; J. A. Woollam

Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis

W. M. Paulson, R. I. Hegde, B. B. Doris, V. Kaushik, P. J. Tobin, J. Fitch, W. A. McGahan, J. A. Woollam

Research output: Contribution to journal › Conference article › peer-review

Abstract

The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopic ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.

Original language	English (US)
Pages (from-to)	77-82
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	355
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Dec 2 1994

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{457076bea0994541ad9defefcc839841,

title = "Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis",

abstract = "The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopic ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.",

author = "Paulson, {W. M.} and Hegde, {R. I.} and Doris, {B. B.} and V. Kaushik and Tobin, {P. J.} and J. Fitch and McGahan, {W. A.} and Woollam, {J. A.}",

year = "1995",

language = "English (US)",

volume = "355",

pages = "77--82",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 02-12-1994",

}

TY - JOUR

T1 - Nucleation and growth of CVD Si thin films

T2 - Proceedings of the 1994 MRS Fall Meeting

AU - Paulson, W. M.

AU - Hegde, R. I.

AU - Doris, B. B.

AU - Kaushik, V.

AU - Tobin, P. J.

AU - Fitch, J.

AU - McGahan, W. A.

AU - Woollam, J. A.

PY - 1995

Y1 - 1995

N2 - The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopic ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.

AB - The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopic ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.

UR - http://www.scopus.com/inward/record.url?scp=0029212250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029212250&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029212250

SN - 0272-9172

VL - 355

SP - 77

EP - 82

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 28 November 1994 through 2 December 1994

ER -

Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this