ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION.

F. Namavar, J. I. Budnick, F. H. Sanchez, H. C. Hayden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Oxygen O** plus ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO//2 formation. Samples were analysed by RBS with 1. 5 MeV He** plus ions. The implants of O** plus in Si were done at 150 keV with current densities of less than equivalent to 10 mu A/cm**2 . For doses of more than 1. 5 multiplied by 10**1**8 O** plus /cm**2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased O** plus doses (for both room temperature and liquid nitrogen temperature) cause the SiO//2 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/SiO//2 interfaces in our experimental situation even at liquid nitrogen temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages317-321
Number of pages5
ISBN (Print)0931837103, 9780931837104
DOIs
StatePublished - 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume45
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION.'. Together they form a unique fingerprint.

  • Cite this

    Namavar, F., Budnick, J. I., Sanchez, F. H., & Hayden, H. C. (1985). ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. In Materials Research Society Symposia Proceedings (pp. 317-321). (Materials Research Society Symposia Proceedings; Vol. 45). Materials Research Soc. https://doi.org/10.1557/proc-45-317