F. Namavar, J. I. Budnick, F. H. Sanchez, H. C. Hayden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Oxygen O** plus ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO//2 formation. Samples were analysed by RBS with 1. 5 MeV He** plus ions. The implants of O** plus in Si were done at 150 keV with current densities of less than equivalent to 10 mu A/cm**2 . For doses of more than 1. 5 multiplied by 10**1**8 O** plus /cm**2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased O** plus doses (for both room temperature and liquid nitrogen temperature) cause the SiO//2 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/SiO//2 interfaces in our experimental situation even at liquid nitrogen temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Number of pages5
ISBN (Print)0931837103, 9780931837104
StatePublished - 1985

Publication series

NameMaterials Research Society Symposia Proceedings
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION.'. Together they form a unique fingerprint.

  • Cite this

    Namavar, F., Budnick, J. I., Sanchez, F. H., & Hayden, H. C. (1985). ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. In Materials Research Society Symposia Proceedings (pp. 317-321). (Materials Research Society Symposia Proceedings; Vol. 45). Materials Research Soc. https://doi.org/10.1557/proc-45-317