On the formation of ultrathin SIMOX structures by low energy implantation

F. Namavar, B. Buchanan, N. M. Kalkhoran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


Silicon-on-insulator (SOI) wafers made by standard energy (150-200 ke V) Separation by IMplantation of Oxygen (SIMOX) process have shown great promise for meeting the needs of radiation-hard microelectronics. However, if SIMOX material is to become a competitive substrate material for manufacturing commercial integrated circuits, the cost of the SIMOX wafers must be greatly reduced. The low energy SIMOX (LES) process accomplishes the needed reduction in cost by producing ultrathin layers which require much lower in doses. These ultrathin layers are necessary for the next generation of commercial ultra high density CMOS integrated circuits, and must be of very high quality to be utilized for commercial applications. In this paper we discuss characterization of ultrathin LES structures.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJerzy Kanicki, William L. Warren, Roderick A.B. Devine, Masakiyo Matsumura
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558991794
StatePublished - 1993
EventProceedings of a Symposium on Amorphous Insulating Thin Films - Boston, MA, USA
Duration: Dec 1 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of a Symposium on Amorphous Insulating Thin Films
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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