One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

Feifei Wang, Lan Jiang, Jingya Sun, Changji Pan, Yiling Lian, Jiaxin Sun, Kai Wang, Qingsong Wang, Jiaxing Wang, Yongfeng Lu

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The third-generation semiconductors are the cornerstone of the power semiconductor leap forward and have attracted much attention because of their excellent properties and wide applications. Meanwhile, femtosecond laser processing as a convenient method further improves the performance of the related devices and expands the application prospect. In this work, an approximate 3 times improvement of the internal quantum efficiency (IQE) and a 5.5 times enhancement of the photoluminescence (PL) intensity were achieved in the GaN film prepared using a one-step femtosecond laser fabrication method. Three types of final micro/nanostructures were found with different femtosecond laser fluences, which could be attributed to the decomposition, melting, bubble nucleation, and phase explosion of GaN. The mechanisms of the microbump structure formation and enhancement of IQE were studied experimentally by the time-resolved reflection pump-probe technique, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Simulations for the laser-GaN interaction have also been performed to ascertain the micro/nanostructure formation principle. These results promote the potential applications of femtosecond lasers on GaN and other wide band gap semiconductors, such as UV-light-emitting diodes (LEDs), photodetectors, and random lasers for use in sensing and full-field imaging.

Original languageEnglish (US)
Pages (from-to)7688-7697
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number6
StatePublished - Feb 17 2021


  • GaN film
  • ablation mechanism
  • femtosecond laser
  • internal quantum efficiency enhancement
  • ultrafast dynamics

ASJC Scopus subject areas

  • General Materials Science


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