Optical and interfacial electronic properties of diamond-like carbon films

John A. Woollam, V. Natarajan, Joel Lamb, A. Azim Khan, George Bu-Abbud, David Mathine, Dan Rubin, Rodney O. Dillon, Bruce Banks, John Pouch, Daniel A. Gulino, Stan Domitz, David C. Liu, David Ingram

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We have been preparing hard semitransparent carbon films on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectroscopy, ellipsometry, conductance-capacitance spectroscopy and α particle-proton recoil spectroscopy. Preparation techniques include r.f. plasma decomposition of methane (and other hydrocarbons), ion beam sputtering and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 1010 states eV-1 cm-2 were found.

Original languageEnglish (US)
Pages (from-to)121-126
Number of pages6
JournalThin Solid Films
Issue number1
StatePublished - Sep 7 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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