Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

C. M. Herzinger; P. G. Snyder; F. G. Celii; Y. C. Kao; B. Johs; J. A. Woollam

Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

C. M. Herzinger, P. G. Snyder, F. G. Celii, Y. C. Kao, B. Johs, J. A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.

Original language	English (US)
Pages (from-to)	122-125
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1994
Event	Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: Mar 27 1994 → Mar 31 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP",

abstract = "Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.",

author = "Herzinger, {C. M.} and Snyder, {P. G.} and Celii, {F. G.} and Kao, {Y. C.} and B. Johs and Woollam, {J. A.}",

year = "1994",

language = "English (US)",

pages = "122--125",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 6th International Conference on Indium Phosphide and Related Materials ; Conference date: 27-03-1994 Through 31-03-1994",

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TY - JOUR

T1 - Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

AU - Herzinger, C. M.

AU - Snyder, P. G.

AU - Celii, F. G.

AU - Kao, Y. C.

AU - Johs, B.

AU - Woollam, J. A.

PY - 1994

Y1 - 1994

N2 - Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.

AB - Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.

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M3 - Conference article

AN - SCOPUS:0028288082

SN - 1092-8669

SP - 122

EP - 125

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 6th International Conference on Indium Phosphide and Related Materials

Y2 - 27 March 1994 through 31 March 1994

ER -

Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

Abstract

ASJC Scopus subject areas

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