Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry

Thomas E. Tiwald; Daniel W. Thompson; John A. Woollam

doi:10.1116/1.589802

Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry

Thomas E. Tiwald, Daniel W. Thompson, John A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.

Original language	English (US)
Pages (from-to)	312-315
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	1
DOIs	https://doi.org/10.1116/1.589802
State	Published - 1998

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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AB - Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.

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Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry

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