Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry

M. Schubert; E. Franke; H. Neumann; T. E. Tiwald; D. W. Thompson; J. A. Woollam; J. Hahn

doi:10.1016/S0040-6090(97)00979-6

Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry

M. Schubert, E. Franke, H. Neumann, T. E. Tiwald, D. W. Thompson, J. A. Woollam, J. Hahn

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We focus on the application of infrared spectroscopic ellipsometry (IRSE) to simultaneously determine phase and microstructure of mixed-phase thin films such as polymorphic-polycrystalline boron nitride (BN) thin films deposited by magnetron sputtering on (100) silicon. We discuss a recently presented microstructure-dependent model for infrared optical properties of mixed-phase thin films which contain anisotropic materials. In particular, the IRSE data are sensitive to the pure or mixed hexagonal (h) and cubic (c) BN thin film layer structure, phase composition and average grain c-axis distribution of the hexagonal phase.

Original language	English (US)
Pages (from-to)	692-696
Number of pages	5
Journal	Thin Solid Films
Volume	313-314
DOIs	https://doi.org/10.1016/S0040-6090(97)00979-6
State	Published - Feb 13 1998

Keywords

Anisotropy
Effective medium theory
Infrared ellipsometry
Mixed-phase thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(97)00979-6

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abstract = "We focus on the application of infrared spectroscopic ellipsometry (IRSE) to simultaneously determine phase and microstructure of mixed-phase thin films such as polymorphic-polycrystalline boron nitride (BN) thin films deposited by magnetron sputtering on (100) silicon. We discuss a recently presented microstructure-dependent model for infrared optical properties of mixed-phase thin films which contain anisotropic materials. In particular, the IRSE data are sensitive to the pure or mixed hexagonal (h) and cubic (c) BN thin film layer structure, phase composition and average grain c-axis distribution of the hexagonal phase.",

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T1 - Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry

AU - Schubert, M.

AU - Franke, E.

AU - Neumann, H.

AU - Tiwald, T. E.

AU - Thompson, D. W.

AU - Woollam, J. A.

AU - Hahn, J.

PY - 1998/2/13

Y1 - 1998/2/13

N2 - We focus on the application of infrared spectroscopic ellipsometry (IRSE) to simultaneously determine phase and microstructure of mixed-phase thin films such as polymorphic-polycrystalline boron nitride (BN) thin films deposited by magnetron sputtering on (100) silicon. We discuss a recently presented microstructure-dependent model for infrared optical properties of mixed-phase thin films which contain anisotropic materials. In particular, the IRSE data are sensitive to the pure or mixed hexagonal (h) and cubic (c) BN thin film layer structure, phase composition and average grain c-axis distribution of the hexagonal phase.

AB - We focus on the application of infrared spectroscopic ellipsometry (IRSE) to simultaneously determine phase and microstructure of mixed-phase thin films such as polymorphic-polycrystalline boron nitride (BN) thin films deposited by magnetron sputtering on (100) silicon. We discuss a recently presented microstructure-dependent model for infrared optical properties of mixed-phase thin films which contain anisotropic materials. In particular, the IRSE data are sensitive to the pure or mixed hexagonal (h) and cubic (c) BN thin film layer structure, phase composition and average grain c-axis distribution of the hexagonal phase.

KW - Anisotropy

KW - Effective medium theory

KW - Infrared ellipsometry

KW - Mixed-phase thin films

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