Optical measurement of built-in and applied electric fields in alxga1-xas/gaas heterostructures

Paul G. Synder; Kenneth G. Merkel; John A. Woollam

doi:10.1117/12.947417

Optical measurement of built-in and applied electric fields in alxga1-xas/gaas heterostructures

Paul G. Synder, Kenneth G. Merkel, John A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.

Original language	English (US)
Pages (from-to)	98-104
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	946
DOIs	https://doi.org/10.1117/12.947417
State	Published - Aug 9 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Optical measurement of built-in and applied electric fields in alxga1-xas/gaas heterostructures",

abstract = "Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.",

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AU - Synder, Paul G.

AU - Merkel, Kenneth G.

AU - Woollam, John A.

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Y1 - 1988/8/9

N2 - Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.

AB - Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.

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Optical measurement of built-in and applied electric fields in alxga1-xas/gaas heterostructures

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