Optical measurement of built-in and applied electric fields in alxga1-xas/gaas heterostructures

Paul G. Synder, Kenneth G. Merkel, John A. Woollam

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.

Original languageEnglish (US)
Pages (from-to)98-104
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume946
DOIs
StatePublished - Aug 9 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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