Optical modeling of Iridium thin film erosion under oxygen plasma exposure

Li Yan; John A. Woollam

doi:10.1116/1.1781182

Optical modeling of Iridium thin film erosion under oxygen plasma exposure

Li Yan, John A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The use of ellipsometry and spectroscopic mode to monitor oxygen plasma etching of iridium was analyzed. It was observed that the etching of film of iridium was done on fused silica substrates using an electron cyclotron resonance plasma source. The nanoscale atomic mixing and index of refraction grading were also analyzed. It was found that the iridium films were etched upon plasma irradiation using spectroscopic psi and delta data.

Original language	English (US)
Pages (from-to)	2177-2181
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1781182
State	Published - Sep 2004

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Optical modeling of Iridium thin film erosion under oxygen plasma exposure",

abstract = "The use of ellipsometry and spectroscopic mode to monitor oxygen plasma etching of iridium was analyzed. It was observed that the etching of film of iridium was done on fused silica substrates using an electron cyclotron resonance plasma source. The nanoscale atomic mixing and index of refraction grading were also analyzed. It was found that the iridium films were etched upon plasma irradiation using spectroscopic psi and delta data.",

author = "Li Yan and Woollam, {John A.}",

note = "Funding Information: This work was supported by the NASA Glenn Research Center, Grant No. NAG3-2219.",

year = "2004",

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doi = "10.1116/1.1781182",

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AU - Woollam, John A.

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PY - 2004/9

Y1 - 2004/9

N2 - The use of ellipsometry and spectroscopic mode to monitor oxygen plasma etching of iridium was analyzed. It was observed that the etching of film of iridium was done on fused silica substrates using an electron cyclotron resonance plasma source. The nanoscale atomic mixing and index of refraction grading were also analyzed. It was found that the iridium films were etched upon plasma irradiation using spectroscopic psi and delta data.

AB - The use of ellipsometry and spectroscopic mode to monitor oxygen plasma etching of iridium was analyzed. It was observed that the etching of film of iridium was done on fused silica substrates using an electron cyclotron resonance plasma source. The nanoscale atomic mixing and index of refraction grading were also analyzed. It was found that the iridium films were etched upon plasma irradiation using spectroscopic psi and delta data.

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Optical modeling of Iridium thin film erosion under oxygen plasma exposure

Abstract

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