Abstract
Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.
Original language | English (US) |
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Pages | 513-518 |
Number of pages | 6 |
State | Published - 2000 |
Externally published | Yes |
Event | 27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: Oct 2 2000 → Oct 5 2000 |
Other
Other | 27th International Symposium on Compound Semiconductors |
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Country | United States |
City | Monterey, CA |
Period | 10/2/00 → 10/5/00 |
ASJC Scopus subject areas
- Engineering(all)