Abstract
Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.
| Original language | English (US) |
|---|---|
| Pages | 513-518 |
| Number of pages | 6 |
| State | Published - 2000 |
| Event | 27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: Oct 2 2000 → Oct 5 2000 |
Other
| Other | 27th International Symposium on Compound Semiconductors |
|---|---|
| Country | United States |
| City | Monterey, CA |
| Period | 10/2/00 → 10/5/00 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Kasic, A., Schubert, M., Rheinländer, B., Off, J., Scholz, F., & Herzinger, C. M. (2000). Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry. 513-518. Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.