Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry

A. Kasic; M. Schubert; B. Rheinländer; J. Off; F. Scholz; C. M. Herzinger

Optical properties of Al_1-xIn_xN thin films determined by spectroscopic ellipsometry

A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, C. M. Herzinger

Research output: Contribution to conference › Paper › peer-review

Abstract

Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E₁ symmetry in hexagonal Al_1-xIn_xN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al_1-xIn_xN E₁(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al_1-xIn_xN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.

Original language	English (US)
Pages	513-518
Number of pages	6
State	Published - 2000
Externally published	Yes
Event	27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: Oct 2 2000 → Oct 5 2000

Other

Other	27th International Symposium on Compound Semiconductors
Country	United States
City	Monterey, CA
Period	10/2/00 → 10/5/00

ASJC Scopus subject areas

Engineering(all)

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Cite this

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title = "Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry",

abstract = "Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.",

author = "A. Kasic and M. Schubert and B. Rheinl{\"a}nder and J. Off and F. Scholz and Herzinger, {C. M.}",

year = "2000",

language = "English (US)",

pages = "513--518",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

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TY - CONF

T1 - Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry

AU - Kasic, A.

AU - Schubert, M.

AU - Rheinländer, B.

AU - Off, J.

AU - Scholz, F.

AU - Herzinger, C. M.

PY - 2000

Y1 - 2000

N2 - Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.

AB - Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.

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AN - SCOPUS:0034424738

SP - 513

EP - 518

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

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