Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry

A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, C. M. Herzinger

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.

Original languageEnglish (US)
Pages513-518
Number of pages6
StatePublished - 2000
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: Oct 2 2000Oct 5 2000

Other

Other27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period10/2/0010/5/00

ASJC Scopus subject areas

  • Engineering(all)

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    Kasic, A., Schubert, M., Rheinländer, B., Off, J., Scholz, F., & Herzinger, C. M. (2000). Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry. 513-518. Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.