Abstract
Spectroscopic ellipsometry from 0.73 to 4.75 eV was used to study the optical properties of epitaxial GaAs0.9-xNxSb 0.1 layers with x = 0.00, 0.65, 1.06, 1.45 and 1.90%. The ellipsometric experimental spectra were fitted using a multilayer model employing the model dielectric function to describe the GaAs 0.9-xNxSb0.1 optical response. We have identified the Γ-point E0, E+, and E# transitions of GaAs0.9-xNxSb0.1 and have determined the effect of nitrogen on the respective transition energies. We have demonstrated that a lower N content can provide an equal E+-E 0 energy splitting for GaAs0.9-xNxSb 0.1 with respect to GaAs1-xNx.
Original language | English (US) |
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Pages (from-to) | 2838-2842 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 519 |
Issue number | 9 |
DOIs | |
State | Published - Feb 28 2011 |
Keywords
- Dielectric function
- III-V semiconductors
- Optical properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry