Optical properties of GaAs1-y Ny (y le; 0.037)

G. Leibiger; B. Rheinländer; V. Gottschalch; M. Schubert; J. Šik; G. Lippold

doi:10.1109/ASDAM.2000.889473

Optical properties of GaAs_1-y N_y (y le; 0.037)

G. Leibiger, B. Rheinländer, V. Gottschalch, M. Schubert, J. Šik, G. Lippold

Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The optical properties of MOVPE GaAs_1-yN_y (0 ≤y ≤ 3.7%) single layers and GaAsN/GaAs superlattices are studied using spectroscopic ellipsometry and Raman spectroscopy. We analyse the dielectric function near the critical points E₀, E₁ and E₁+δ₁ using Adachi's critical-point model. For the layers and the GaAsN superlattice sublayers we observe the strong reduction of the band gap. Contrary to the red shift of the gap energy E₀, the E₁ and E₁+δ₁ energies are linearly blue shifted with increasing y. For 0 ≤y ≤1.65% the observed blueshift of the E₁ energy is well explained by the combination of the effects of biaxial (001) strain and alloying. In the Raman spectra the redshift and broadening of the GaAs LO₁ mode and the existence of the nitrogen local mode LO₂ near 470 cm^-1 have been detected.

Original language	English (US)
Title of host publication	ASDAM 2000 - Conference Proceedings
Subtitle of host publication	3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
Editors	Jan Kuzmik, Jozef Osvald, Stefan Hascik, Juraj Breza
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	171-174
Number of pages	4
ISBN (Electronic)	0780359399, 9780780359390
DOIs	https://doi.org/10.1109/ASDAM.2000.889473
State	Published - 2000
Event	3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia Duration: Oct 16 2000 → Oct 18 2000

Publication series

Name	ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Other

Other	3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
Country/Territory	Slovakia
City	Smolenice
Period	10/16/00 → 10/18/00

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/ASDAM.2000.889473

Cite this

Leibiger, G., Rheinländer, B., Gottschalch, V., Schubert, M., Šik, J., & Lippold, G. (2000). Optical properties of GaAs_1-y N_y (y le; 0.037). In J. Kuzmik, J. Osvald, S. Hascik, & J. Breza (Eds.), ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 171-174). Article 889474 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889473

Optical properties of GaAs_1-y N_y (y le; 0.037). / Leibiger, G.; Rheinländer, B.; Gottschalch, V. et al.
ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. ed. / Jan Kuzmik; Jozef Osvald; Stefan Hascik; Juraj Breza. Institute of Electrical and Electronics Engineers Inc., 2000. p. 171-174 889474 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Leibiger, G, Rheinländer, B, Gottschalch, V, Schubert, M, Šik, J & Lippold, G 2000, Optical properties of GaAs_1-y N_y (y le; 0.037). in J Kuzmik, J Osvald, S Hascik & J Breza (eds), ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems., 889474, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 171-174, 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003, Smolenice, Slovakia, 10/16/00. https://doi.org/10.1109/ASDAM.2000.889473

Leibiger G, Rheinländer B, Gottschalch V, Schubert M, Šik J, Lippold G. Optical properties of GaAs_1-y N_y (y le; 0.037). In Kuzmik J, Osvald J, Hascik S, Breza J, editors, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2000. p. 171-174. 889474. (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems). doi: 10.1109/ASDAM.2000.889473

Leibiger, G. ; Rheinländer, B. ; Gottschalch, V. et al. / Optical properties of GaAs_1-y N_y (y le; 0.037). ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. editor / Jan Kuzmik ; Jozef Osvald ; Stefan Hascik ; Juraj Breza. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 171-174 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems).

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AB - The optical properties of MOVPE GaAs1-yNy (0 ≤y ≤ 3.7%) single layers and GaAsN/GaAs superlattices are studied using spectroscopic ellipsometry and Raman spectroscopy. We analyse the dielectric function near the critical points E0, E1 and E1+δ1 using Adachi's critical-point model. For the layers and the GaAsN superlattice sublayers we observe the strong reduction of the band gap. Contrary to the red shift of the gap energy E0, the E1 and E1+δ1 energies are linearly blue shifted with increasing y. For 0 ≤y ≤1.65% the observed blueshift of the E1 energy is well explained by the combination of the effects of biaxial (001) strain and alloying. In the Raman spectra the redshift and broadening of the GaAs LO1 mode and the existence of the nitrogen local mode LO2 near 470 cm-1 have been detected.

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