Optical properties of SiO x nanostructured films by pulsed-laser deposition

X. Y. Chen, Y. F. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiO x nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory.

Original languageEnglish (US)
Title of host publication2005 Conference on Lasers and Electro-Optics, CLEO
Pages1745-1747
Number of pages3
StatePublished - Dec 1 2005
Event2005 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

Name2005 Conference on Lasers and Electro-Optics, CLEO
Volume3

Conference

Conference2005 Conference on Lasers and Electro-Optics, CLEO
CountryUnited States
CityBaltimore, MD
Period5/22/055/27/05

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Chen, X. Y., & Lu, Y. F. (2005). Optical properties of SiO x nanostructured films by pulsed-laser deposition. In 2005 Conference on Lasers and Electro-Optics, CLEO (pp. 1745-1747). [CThL4] (2005 Conference on Lasers and Electro-Optics, CLEO; Vol. 3).