The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Applied Physics|
|State||Published - Sep 15 2004|
ASJC Scopus subject areas
- Physics and Astronomy(all)