Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures

X. Y. Chen; Y. F. Lu; Y. H. Wu; B. J. Cho; W. D. Song; D. Y. Dai

doi:10.1063/1.1782274

Optical properties of SiO _x nanostructured films by pulsed-laser deposition at different substrate temperatures

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, W. D. Song, D. Y. Dai

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO _x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).

Original language	English (US)
Pages (from-to)	3180-3186
Number of pages	7
Journal	Journal of Applied Physics
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.1782274
State	Published - Sep 15 2004
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).",

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AU - Chen, X. Y.

AU - Lu, Y. F.

AU - Wu, Y. H.

AU - Cho, B. J.

AU - Song, W. D.

AU - Dai, D. Y.

PY - 2004/9/15

Y1 - 2004/9/15

N2 - The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).

AB - The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).

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Optical properties of SiO _x nanostructured films by pulsed-laser deposition at different substrate temperatures

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