Optical properties of siox nanostructured films by pulsed-laser deposition

X. Y. Chen, Y. F. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiOx nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6- 2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2005
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
StatePublished - Jan 1 2005
EventConference on Lasers and Electro-Optics, CLEO 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2005
CountryUnited States
CityBaltimore, MD
Period5/22/055/22/05

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Chen, X. Y., & Lu, Y. F. (2005). Optical properties of siox nanostructured films by pulsed-laser deposition. In Conference on Lasers and Electro-Optics, CLEO 2005 (Optics InfoBase Conference Papers). Optical Society of America.